FDB5690 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 32 A, 60 V. RDS(ON) = 0.027 Ω @ VGS = 10 V RDS(ON) = 0.032 Ω @ VGS = 6 V.
* Critical DC electrical parameters specified at evevated temperature.
* Rugged in.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.

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